Dielectric relaxation in complex perovskite Ba(Bi1/2Ta1/2)O3

被引：0
|
作者：
Amodini Mishra
S. N. Choudhary
R. N. P. Choudhary
V. R. K. Murthy
Kamal Prasad
机构：
[1] T. M. Bhagalpur University,University Department of Physics
[2] Indian Institute of Technology,Department of Physics and Meteorology
[3] Indian Institute of Technology,Department of Physics
来源：
Journal of Materials Science: Materials in Electronics | 2012年 / 23卷
关键词：
Dielectric Relaxation; Electric Modulus; High Frequency Side; Modulus Spectrum; Complex Electric Modulus;
D O I：
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摘要：
A new lead-free perovskite Ba(Bi1/2Ta1/2)O3 was prepared by conventional ceramic fabrication technique at 1,200 °C/4 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. The crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm3m. EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed a low temperature coefficient of capacitance (TCC < 4%) up to +125 °C. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. Electric modulus studies supported the hopping type of conduction in Ba(Bi1/2Ta1/2)O3.
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页码：185 / 192
页数：7
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