High efficiency and stability of ink-jet printed quantum dot light emitting diodes

被引：0
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作者：
Chaoyu Xiang
Longjia Wu
Zizhe Lu
Menglin Li
Yanwei Wen
Yixing Yang
Wenyong Liu
Ting Zhang
Weiran Cao
Sai-Wing Tsang
Bin Shan
Xiaolin Yan
Lei Qian
机构：
[1] TCL Research,Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering
[2] Chinese Academy of Science,Center of Super
[3] City University of Hong Kong,Diamond and Advanced Films (COSDAF)
[4] City University of Hong Kong,Department of Materials Science and Engineering
[5] Huazhong University of Science and Technology,State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering
来源：
Nature Communications | / 11卷
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摘要：
The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
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