GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

被引：0
|
作者：
E. V. Kunitsyna
I. A. Andreev
G. G. Konovalov
E. V. Ivanov
A. A. Pivovarova
N. D. Il’inskaya
Yu. P. Yakovlev
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2018年 / 52卷
关键词：
Heterostructure Photodiodes; Reverse Dark Current; Sensitive Area Diameter; Tunneling Component; Front Ohmic Contact;
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学科分类号：
摘要：
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页码：1215 / 1220
页数：5
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