Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range

被引：3

作者：

Aruev, P. N. ^{[1
]}

Ber, B. Ya ^{[1
]}

Gorokhov, A. N. ^{[1
]}

Zabrodskii, V. V. ^{[1
]}

Kazantsev, D. Yu. ^{[1
]}

Nikolaev, A. V. ^{[1
]}

Filimonov, V. V. ^{[1
]}

Shvarts, M. Z. ^{[1
]}

Sherstnev, E. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 08期

关键词：

avalanche photodiode; IR spectral range; silicon; dark current; IMPACT IONIZATION;

D O I：

10.1134/S1063785019080054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The sensitivity at wavelengths in the range 400-1150 nm, dark current, and dynamic characteristics of an silicon avalanche photodiode with an active region 1.5 mm in diameter that we developed have been examined. It has been shown that the avalanche photodiode has the following set of characteristics: sensitivity 80-85 A/W at wavelengths of 900-1010 nm, dark current 1.5 nA, and leading and trailing edges shorter than 2.5 ns at a reverse bias voltage of 350 V.

引用

页码：780 / 782

页数：3

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