Chemical vapour deposition

被引:0
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作者
Luzhao Sun
Guowen Yuan
Libo Gao
Jieun Yang
Manish Chhowalla
Meysam Heydari Gharahcheshmeh
Karen K. Gleason
Yong Seok Choi
Byung Hee Hong
Zhongfan Liu
机构
[1] Peking University,Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
[2] Beijing Graphene Institute,National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures
[3] Nanjing University,Department of Materials Science and Metallurgy
[4] University of Cambridge,Department of Chemical Engineering
[5] Massachusetts Institute of Technology,Graphene Research Center
[6] Advanced Institute of Convergence Technology,Department of Chemistry
[7] Seoul National University,undefined
[8] Graphene Square Inc.,undefined
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摘要
Chemical vapour deposition (CVD) is a powerful technology for producing high-quality solid thin films and coatings. Although widely used in modern industries, it is continuously being developed as it is adapted to new materials. Today, CVD synthesis is being pushed to new heights with the precise manufacturing of both inorganic thin films of 2D materials and high-purity polymeric thin films that can be conformally deposited on various substrates. In this Primer, an overview of the CVD technique, including instrument construction, process control, material characterization and reproducibility issues, is provided. By taking graphene, 2D transition metal dichalcogenides (TMDs) and polymeric thin films as typical examples, the best practices for experimentation involving substrate pretreatment, high-temperature growth and post-growth processes are presented. Recent advances and scaling-up challenges are also highlighted. By analysing current limitations and optimizations, we also provide insight into possible future directions for the method, including reactor design for high-throughput and low-temperature growth of thin films.
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