On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

被引：0
|
作者：
G. Yu. Vasileva
Yu. B. Vasilyev
S. N. Novikov
S. N. Danilov
S. D. Ganichev
机构：
[1] Ioffe Institute,Micro and Nanoscience Laboratory
[2] Aalto University (Aalto-yliopisto),undefined
[3] Terahertz Center TerZ,undefined
[4] University of Regensburg (Institut für Angewandte Physik,undefined
[5] Universitüt Regensburg),undefined
来源：
Semiconductors | 2018年 / 52卷
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摘要：
A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.
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页码：1077 / 1081
页数：4
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