Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices

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作者
Marcelo Davanco
Jin Liu
Luca Sapienza
Chen-Zhao Zhang
José Vinícius De Miranda Cardoso
Varun Verma
Richard Mirin
Sae Woo Nam
Liu Liu
Kartik Srinivasan
机构
[1] National Institute of Standards and Technology,Center for Nanoscale Science and Technology
[2] Sun-Yat Sen University,School of Physics
[3] University of Maryland,Maryland NanoCenter
[4] University of Southampton,Department of Physics & Astronomy
[5] South China Normal University,South China Academy of Advanced Optoelectronics, Science Building No. 5
[6] Higher-Education Mega-Center,undefined
[7] Federal University of Campina Grande,undefined
[8] National Institute of Standards and Technology,undefined
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Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light–matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots—a mature class of solid-state quantum emitter—with low-loss Si3N4 waveguides. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong-coupling regime.
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