Dielectric and lattice-dynamical properties of III-nitrides

被引：0
|
作者：
Ulrike Grossner
J. Furthmüller
F. Bechstedt
机构：
[1] Friedrich-Schiller-Universität,Institut für Festkörpertheorie and Theoretische Optik
来源：
Journal of Electronic Materials | 2000年 / 29卷
关键词：
III-nitrides; vibrational; phonons; ordered; density-of-states;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
First-principles calculations are performed to investigate dynamical and dielectric properties of group-III-nitrides. We focus on vibrational frequencies, dynamical charges, and the phonon density of states of cubic AlN, GaN, and InN. Chemical trends are derived and discussed. The first ab initio calculations of phonon branches and density of states are presented for an ordered InxGa1−xN structure.
引用
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页码：281 / 284
页数：3
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