Influence of Fe on the Distribution Characteristics of P in Silicon Melt During Directional Solidification

被引:0
|
作者
Qian He
Linjun Han
Jijun Wu
Wenhui Ma
机构
[1] Kunming University of Science and Technology,Faculty of Metallurgical and Energy Engineering
[2] Kunming University of Science and Technology,National Engineering Research Center of Vacuum Metallurgy
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Other impurity components in silicon melt at high temperature will affect P removal from metallurgical-grade silicon (MG–Si). Fe is one of the most abundant impurities in silicon and therefore probably affects P removal. In this paper, the effect of Fe on characteristics of P distribution in silicon melt during directional solidification experiments was investigated based on activity interaction coefficients of Fe to P in Si–P–Fe melt. The experimental results show that overall trend of P enrichment in experimental samples of MG–Si and Si–P alloys, but the difference in P content of each part is not significant. In the experimental samples of Si–P–Fe alloys, contents of Fe and P show a gradual increase from bottom to the top of samples. The enrichment area of P is highly overlapped with that of Fe, and P and Fe are always distributed together, confirming that Fe carries part of P along with segregation to top of sample during directional solidification process. The electron probe microanalysis results show that P forms a high enrichment within Fe distribution area in top position of sample. It is further shown that co-segregation of Fe and P occurs under the interaction force between Fe and P during directional solidification process.
引用
收藏
页码:799 / 807
页数:8
相关论文
共 50 条
  • [31] A model for distribution of aluminum in silicon refined by vacuum directional solidification
    Huang, Shuping
    Ma, Wenhui
    Wei, Kuixian
    Li, Shaoyuan
    Morita, Kazuki
    VACUUM, 2013, 96 : 12 - 17
  • [32] In situ observation of crystal/melt interface and infrared measurement of temperature profile during directional solidification of silicon wafer
    Liao, T-J
    Kang, Y. S.
    Lan, C. W.
    JOURNAL OF CRYSTAL GROWTH, 2018, 499 : 90 - 97
  • [33] Resistivity Distribution of Multicrystalline Silicon Ingot Grown by Directional Solidification
    S. H. Sun
    Y. Tan
    W. Dong
    H. X. Zhang
    J. S. Zhang
    Journal of Materials Engineering and Performance, 2012, 21 : 854 - 858
  • [34] A MATHEMATICAL MODEL FOR DISTRIBUTION OF CALCIUM IN SILICON BY VACUUM DIRECTIONAL SOLIDIFICATION
    Zheng, D.
    Wei, K.
    Ma, W.
    Sheng, Z.
    Dai, Y.
    JOURNAL OF MINING AND METALLURGY SECTION B-METALLURGY, 2016, 52 (02) : 157 - 162
  • [35] Formation and capturing of nanoparticles in Cu-1wt.%Fe alloy melt during directional solidification process
    Tao Wang
    Xiao-hua Chen
    Guo-dong Shi
    Chang-rong Li
    Zi-dong Wang
    Journal of Iron and Steel Research(International), 2017, 24 (04) : 411 - 415
  • [36] Formation and capturing of nanoparticles in Cu-1wt. %Fe alloy melt during directional solidification process
    Tao Wang
    Xiao-hua Chen
    Guo-dong Shi
    Chang-rong Li
    Zi-dong Wang
    Journal of Iron and Steel Research International, 2017, 24 : 411 - 415
  • [37] The effect of melt superheat on interface morphological stability during directional solidification
    Geng, XG
    Chen, G
    Fu, HZ
    ACTA METALLURGICA SINICA, 2002, 38 (03) : 225 - 229
  • [38] Erratum to: “Melt flow effect on interface stability during directional solidification”
    O. P. Fedorov
    A. G. Mashkovskiy
    Crystallography Reports, 2015, 60 : 451 - 451
  • [39] Preferred crystal orientations due to melt convection during directional solidification
    Bergman, MI
    Cole, DM
    Jones, JR
    JOURNAL OF GEOPHYSICAL RESEARCH-SOLID EARTH, 2002, 107 (B9)
  • [40] Directional solidification of silicon under the influence of travelling magnetic field
    Cablea, M.
    Zaidat, K.
    Gagnoud, A.
    Nouri, A.
    Delannoy, Y.
    JOURNAL OF CRYSTAL GROWTH, 2014, 401 : 883 - 887