Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE

被引：0
|
作者：
R. Kh. Akchurin
A. Yu. Andreev
L. B. Berliner
O. I. Govorkov
V. P. Duraev
A. A. Maldzhy
A. A. Marmalyuk
A. A. Padalitsa
A. V. Petrovsky
D. R. Sabitov
A. V. Sukharev
机构：
[1] Lomonosov State Academy of Fine Chemical Technology,
[2] Sigm Plus Co.,undefined
[3] Polyus Research and Development Institute,undefined
来源：
Semiconductors | 2009年 / 43卷
关键词：
78.60.Fi; 78.67.De; 68.65.Fg; 81.07.St;
D O I：
暂无
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学科分类号：
摘要：
Surface segregation during epitaxial growth of stressed InGaAs/GaAs quantum-well heterostructures significantly distorts the nominal concentration profile of quantum wells. The consideration of the effect for growth conditions and elastic stresses appearing during epitaxy on segregation made it possible to simulate the concentration profile with a high accuracy and to calculate the electroluminescence wavelength of actual InGaAs/GaAs heterostructures with quantum wells. It was shown that the observed effect of the long-wave-length shift for the interband transition wavelength in the important case of heterostructures with two neighboring quantum wells is caused by the influence of elastic stresses during growth.
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页码：63 / 68
页数：5
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