Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE

被引：0
|
作者：
R. Kh. Akchurin
A. Yu. Andreev
L. B. Berliner
O. I. Govorkov
V. P. Duraev
A. A. Maldzhy
A. A. Marmalyuk
A. A. Padalitsa
A. V. Petrovsky
D. R. Sabitov
A. V. Sukharev
机构：
[1] Lomonosov State Academy of Fine Chemical Technology,
[2] Sigm Plus Co.,undefined
[3] Polyus Research and Development Institute,undefined
来源：
Semiconductors | 2009年 / 43卷
关键词：
78.60.Fi; 78.67.De; 68.65.Fg; 81.07.St;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Surface segregation during epitaxial growth of stressed InGaAs/GaAs quantum-well heterostructures significantly distorts the nominal concentration profile of quantum wells. The consideration of the effect for growth conditions and elastic stresses appearing during epitaxy on segregation made it possible to simulate the concentration profile with a high accuracy and to calculate the electroluminescence wavelength of actual InGaAs/GaAs heterostructures with quantum wells. It was shown that the observed effect of the long-wave-length shift for the interband transition wavelength in the important case of heterostructures with two neighboring quantum wells is caused by the influence of elastic stresses during growth.
引用
收藏
页码：63 / 68
页数：5
相关论文
共 50 条
  • [1] Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE
    Akchurin, R. Kh.
    Andreev, A. Yu.
    Berliner, L. B.
    Govorkov, O. I.
    Duraev, V. P.
    Maldzhy, A. A.
    Marmalyuk, A. A.
    Padalitsa, A. A.
    Petrovsky, A. V.
    Sabitov, D. R.
    Sukharev, A. V.
    SEMICONDUCTORS, 2009, 43 (01) : 63 - 68
  • [2] Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE
    Su, Y. K.
    Chen, W. C.
    Wan, C. T.
    Yu, H. C.
    Chuang, R. W.
    Tsai, M. C.
    Cheng, K. Y.
    Hu, C.
    Tsau, Seth
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (15) : 3615 - 3620
  • [3] Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
    Akchurin, R. Kh.
    Berliner, L. B.
    Marmalyuk, A. A.
    THIN SOLID FILMS, 2010, 518 (08) : 2105 - 2114
  • [4] Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn δ-layer
    Zaitsev, S. V.
    Kulakovskii, V. D.
    Dorokhin, M. V.
    Danilov, Yu. A.
    Demina, P. B.
    Sapozhnikov, M. V.
    Vikhrova, O. V.
    Zvonkov, B. N.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (04): : 652 - 654
  • [5] Misfit dislocations and surface morphology of InGaAs/GaAs heterostructures grown by MOVPE
    Gelczuk, Lukasz
    Dabrowska-Szata, Maria
    Masalska, Agate
    Lusakowska, Elzbieta
    Dluzewski, Piotr
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 2009, 6 (08): : 1918 - +
  • [6] The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE
    Lozinska, Adriana
    Badura, Mikolaj
    Bielak, Katarzyna
    Sciana, Beata
    Tlaczala, Marek
    OPTICA APPLICATA, 2020, 50 (02) : 251 - 256
  • [7] DLTS and PR studies of partially relaxed InGaAs/GaAs heterostructures grown by MOVPE
    Gelczuk, L.
    Jozwaik, G.
    Motyka, M.
    Dabrowska-Szata, M.
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 485 - +
  • [8] TEM CHARACTERIZATION OF THE INTERFACE QUALITY OF MOVPE GROWN STRAINED INGAAS/GAAS HETEROSTRUCTURES
    HOPNER, A
    SEITZ, H
    RECHENBERG, I
    BUGGE, F
    PROCOP, M
    SCHEERSCHMIDT, K
    QUEISSER, HJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 150 (01): : 427 - 437
  • [9] ANISOTROPY IN INGAAS/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE MOVPE AND CBE
    ROTH, AP
    MORRIS, D
    SUN, Q
    LACELLE, C
    WASILEWSKI, Z
    MAIGNE, P
    BENSAOULA, A
    JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 212 - 217
  • [10] GAAS/ALGAAS QUANTUM WELL STRUCTURES GROWN BY MOVPE
    LEITCH, AWR
    VERMAAK, JS
    EHLERS, HL
    RAUBENHEIMER, D
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (08) : 708 - 710
12345