Effect of electric fields on the dynamics of silicon microhardness changes induced by low-intensity β irradiation

被引：3
|
作者：
Dmitrievskii A.A. [1 ]
Golovin Yu.I. [1 ]
Vasyukov V.M. [1 ]
Suchkova N.Yu. [1 ]
机构：
[1] Tambov State University, Tambov 392622
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2008年 / 72卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
5;
D O I：
10.3103/S1062873808070149
中图分类号：
学科分类号：
摘要：
Decelerating effect of electric fields on silicon microhardness changes induced by low-intensity (I = 10.4 × 104 cm-2 s-1) β irradiation has been revealed. The threshold character of the electric field effect is found (the effect is absent at electric fields E < 350 V cm-1). © Allerton Press, Inc 2008.
引用
收藏
页码：934 / 936
页数：2
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