Growth and optical parameters of GaSe:Te crystals

被引：0
|
作者：
S. Yu. Sarkisov
V. V. Atuchin
T. A. Gavrilova
V. N. Kruchinin
S. A. Bereznaya
Z. V. Korotchenko
O. P. Tolbanov
A. I. Chernyshev
机构：
[1] V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University,
[2] Institute for Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences,undefined
来源：
Russian Physics Journal | 2010年 / 53卷
关键词：
crystal growth; ellipsometry; gallium selenide; absorption spectra; electron microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A series of technological experiments on the growth of GaSe:Te single crystals by the Bridgman–Stockbarger method is performed. Surface micromorphology and mechanical properties of crystals with different doping levels are studied. Spectral dependences of the complex refractive index are obtained using ellipsometry. The experimental data are approximated within the Lorentz–Drude model.
引用
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页码：346 / 352
页数：6
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