On the preparation of CuInSe2 thin films via two‒stage selenization

被引：1
|
作者：
Gadjiev T.M. [1 ]
Gadjieva R.M. [1 ]
Kallaev S.N. [1 ]
Aliev A.R. [1 ]
Aliev M.A. [1 ]
机构：
[1] Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala
来源：
Journal of Surface Investigation | 2016年 / 10卷 / 06期
关键词：
chemical analysis; microinclusions; morphology; selenization; structure;
D O I：
10.1134/S1027451016040273
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A two-stage selenization method for preparing CuInSe2 thin films in a carrier-gas (nitrogen) flow is developed. The dependences between the morphology and structure of CuInSe2 thin films and the selenization temperature are studied via electron microscopy and X-ray diffraction analysis. It is demonstrated that the film incorporates copper and indium selenides in the temperature range 300°C ≤ T < 400°C and a stoichiometric film with ordered chalcopyrite is formed at Т = 400°С. The possible mechanism whereby a CuInSe2 thin film is generated with the participation of selenization centers, namely, Cu2Se and In2Se3 grains, is discussed. © 2016, Pleiades Publishing, Ltd.
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页码：1197 / 1201
页数：4
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