Formation of perfect ohmic contact at indium tin oxide/N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine interface using ReO3

被引：0

作者：

Seung-Jun Yoo

Jung-Hung Chang

Jeong-Hwan Lee

Chang-Ki Moon

Chih-I Wu

Jang-Joo Kim

机构：

[1] Seoul National University,WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light

[2] National Taiwan University,Emitting Diodes

[3] Seoul National University,Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering

来源：

Scientific Reports | / 4卷

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摘要：

A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.4 eV, to NPB, indicating that the Fermi level is pinned to the NPB polaron energy level. However, a significant difference is observed in the generated charge density in the NPB layer near the interfacial layer/NPB interface, indicating that charge generation at the interface plays an important role in forming the ohmic contact.

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