Optical phonon spectrum of germanium quantum dots

被引：0
|
作者：
A. B. Talochkin
V. A. Markov
A. I. Nikiforov
S. A. Tiis
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch of the
来源：
Journal of Experimental and Theoretical Physics Letters | 1999年 / 70卷
关键词：
78.30.Am; 73.20.Dj; 68.65.+g;
D O I：
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学科分类号：
摘要：
We have observed additional lines, shifted in both directions relative to the frequency of the bulk phonon of Ge, in the Raman scattering spectra from optical phonons in germanium quantum dots. The observed phonon modes are shown to be due to the straining of the quantum dots as a result of the lattice mismatch of the Ge and Si matrices. The observed frequency shifts, with allowance for optical-phonon localization effects, make it possible to determine the sizes of the regions with different strain states in the quantum dots.
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页码：288 / 293
页数：5
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