Enhancement the intensity of optical transitions in the germanium/silicon nanosystem with germanium quantum dots

It is shown that in a germanium/silicon nanosystem with germanium quantum dots, the hole leaving the germanium quantum dot causes the appearance of the hole energy level in the bandgap energy in a silicon matrix. The dependences of the energies of the ground state of a hole and an electron, as well as spatially indirect excitons on the radius of the germanium QD and on the depth of the potential well for holes in the germanium QD are obtained. It is found that as a result of a direct electron transition in real space between the electron level, located in the conduction band of the silicon matrix, and the hole level located in the bandgap of the silicon matrix, the radiative recombination intensity in the germanium/silicon nanosystem with germanium quantum dots increases significantly.