Junction properties of Schottky diode based on composite organic semiconductors

被引:0
|
作者
R. K. Gupta
R. A. Singh
机构
[1] Banaras Hindu University,Molecular Electronics Laboratory, Department of Chemistry, Faculty of Science
关键词
Chloride; Temperature Increase; Electronic Material; Polyaniline; Equivalent Circuit;
D O I
暂无
中图分类号
学科分类号
摘要
Composite of polyaniline with polyvinyl chloride (PANI-PVC) has been used for the fabrication of Schottky diode with configuration Pt/PANI-PVC/In. Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Various junction parameters were calculated from the temperature dependent I-V and C-V data and discussed. It has been observation that ideality factor decreases as the temperature increases. Impedance studies shows the R(RC)(RC) equivalent circuit for the fabricated Schottky diode.
引用
收藏
页码:253 / 256
页数:3
相关论文
共 50 条
  • [11] Extraction of electronic parameters of Schottky diode based on an organic Orcein
    Aydogan, Sakir
    Incekara, Umit
    Deniz, A. R.
    Turut, Abdulmecit
    MICROELECTRONIC ENGINEERING, 2010, 87 (12) : 2525 - 2530
  • [12] Fabrication and electrical characteristics of Schottky diode based on organic material
    Guellue, Oe.
    Aydogan, S.
    Tueruet, A.
    MICROELECTRONIC ENGINEERING, 2008, 85 (07) : 1647 - 1651
  • [13] Electrical characterization of a Schottky diode based on organic semiconductor film
    Physics Department, Sciences of Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia
    J. Optoelectron. Adv. Mat., 7-8 (793-797):
  • [14] Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes
    Azmi, Siti Nadiah Che
    Abd Rahman, Shaharin Fadzli
    Nawabjan, Amirjan
    Hashim, Abdul Manaf
    MICROELECTRONIC ENGINEERING, 2018, 196 : 32 - 37
  • [15] Junction properties of Schottky diode with chemically prepared copolymer having hexylthiophene and cyclohexylthiophene units
    Saxena, V
    Santhanam, KSV
    CURRENT APPLIED PHYSICS, 2003, 3 (2-3) : 227 - 233
  • [16] Organic Schottky Diode: Characterization of Traps
    Rani, Varsha
    Yadav, Sarita
    Ghosh, Subhasis
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [17] Characterization of erbium-silicided Schottky diode junction
    Jang, M
    Kim, Y
    Shin, J
    Lee, S
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) : 354 - 356
  • [18] A photovoltaic response of a Schottky diode based on the conducting polymer PEDOT:PSS and inorganic semiconductors
    Kislyuk, V. V.
    Smertenko, P. S.
    Dimitriev, O. P.
    Pud, A. A.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2010, 51 (02):
  • [19] An organic Schottky diode (OSD) based on a-silicon/polycarbazole contact
    Srivastava, Aditi
    Chakrabarti, P.
    SYNTHETIC METALS, 2015, 207 : 96 - 101
  • [20] Interface controlling study of silicon based Schottky diode by organic layer
    Imer, Arife Gencer
    Korkut, A.
    Farooq, W. A.
    Dere, A.
    Atif, M.
    Hanif, Atif
    Karabulut, Abdulkerim
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (21) : 19239 - 19246