Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas

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作者
A. A. Bykov
A. K. Bakarov
L. V. Litvin
A. I. Toropov
机构
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
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73.50.Jt; 75.70.Cn; 07.60.Ly;
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摘要
Magnetotransport properties of ballistic ring interferometers made on the basis of 2D electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers are studied. An asymmetry of magnetoresistance and a phase reversal in h/e oscillations are observed when the bias voltage across the ring exceeds kT/e.
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页码:209 / 212
页数:3
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