Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

被引：0
|
作者：
E. S. Zhukova
B. P. Gorshunov
V. A. Yuryev
L. V. Arapkina
K. V. Chizh
V. A. Chapnin
V. P. Kalinushkin
A. S. Prokhorov
G. N. Mikhailova
机构：
[1] Russian Academy of Sciences,Prokhorov General Physics Institute
来源：
JETP Letters | 2010年 / 92卷
关键词：
JETP Letter; Scanning Tunneling Microscope; Transmission Coefficient; Silicon Layer; Terahertz Radiation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3–1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed.
引用
收藏
页码：793 / 798
页数：5
相关论文
共 50 条
  • [31] Effect of Ge/Si Heterostructures on Carrier Extraction in Si Solar Cells with Ge Quantum Dots
    Tayagaki, Takeshi
    Hoshi, Yusuke
    Ooi, Kazufumi
    Kiguchi, Takanori
    Usami, Noritaka
    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 330 - 332
  • [32] Variation of in-plane lattice constant of Si/Ge/Si heterostructures with Ge quantum dots
    Nikiforov, Alexander
    Ulyanov, Vladimir
    Shaiduk, Roman
    Teys, Sergey
    Gutakovsky, Anton
    Pchelyakov, Oleg
    INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, 2007, 6 (3-4): : 297 - 299
  • [33] Variation of in-plane lattice constant of Si/Ge/Si heterostructures with Ge quantum dots
    Nikiforov, Alexander
    Ulyanov, Vladimir
    Shaiduk, Roman
    Teys, Sergey
    Gutakovsky, Anton
    Pchelyakov, Oleg
    International Journal of Nanoscience, 2007, 6 (3-4) : 297 - 299
  • [34] Photoinduced light absorption in Ge/Si quantum dots
    Ustimenko, R. V.
    Karaulov, D. A.
    Vinnichenko, M. Ya.
    Makhov, I. S.
    Firsov, D. A.
    Sarkisyan, H. A.
    Sargsian, T. A.
    Hayrapetyan, D. B.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2024, 17 (01): : 105 - 112
  • [35] Optical absorption spectra of Si with Ge quantum dots
    V. N. Brudnyi
    S. N. Grinyaev
    Russian Physics Journal, 2010, 53 : 703 - 705
  • [36] OPTICAL ABSORPTION SPECTRA OF Si WITH Ge QUANTUM DOTS
    Brudnyi, V. N.
    Grinyaev, S. N.
    RUSSIAN PHYSICS JOURNAL, 2010, 53 (07) : 703 - 705
  • [37] Observation of terahertz radiation absorption in CdSe quantum dots
    Onushchenko, Petr A.
    Denisultanov, Alaudi K.
    Khodzitsky, Mikhail K.
    Onushchenko, Aleksei A.
    METAMATERIALS X, 2015, 9502
  • [38] Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots
    Kondratenko, S. V.
    Nikolenko, A. S.
    Vakulenko, O. V.
    Valakh, M. Ya
    Yukhymchuk, V. O.
    Dvurechenskii, A. V.
    Nikiforov, A. I.
    NANOTECHNOLOGY, 2008, 19 (14)
  • [39] Ge-quantum dots on Si(001) tailored by carbon predeposition
    Leifeld, O
    Grutzmacher, D
    Muller, B
    Kern, K
    EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 : 183 - 189
  • [40] Superlattices of self-assembled Ge/Si(001) quantum dots
    Le Thanh, V
    Yam, V
    APPLIED SURFACE SCIENCE, 2003, 212 : 296 - 304
12345