Green electroluminescence from AlN:Tb thin film devices on glass

被引：0
|
作者：
Daisuke Adachi
Ryohei Kitaike
Jun Ota
Toshihiko Toyama
Hiroaki Okamoto
机构：
[1] Osaka University,Department of Systems Innovation, Graduate School of Engineering Science
来源：
Journal of Materials Science: Materials in Electronics | 2007年 / 18卷
关键词：
Emission Peak; Host Material; Emission Layer; Maximum Luminance; Threshold Electric Field;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electroluminescence (EL) properties of AlN:Tb thin film EL device (TFELD) prepared on a glass substrate by a rf-magnetron sputtering method have been studied. The AlN:Tb emission layer consists of hexagonal (110)-oriented poly-crystals of AlN with a high transparency in visible region. Four emission peaks originating from 5D4 → 7Fj (j = 6, 5, 4, 3) transitions of Tb3+ were found in both photoluminescence (PL) and EL spectra of the AlN:Tb thin film. The peak emission intensity of the 5D4 → 7F6 transitions is almost the same magnitude with that of the 5D4 → 7F5 transitions, being largely different from the intensity ratio of Tb3+in other host materials.
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页码：71 / 74
页数：3
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