Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

被引：0

作者：

HX Zhao

SF Yoon

CZ Tong

CY Liu

R Wang

Q Cao

机构：

[1] Nanyang Technological University,School of Electrical and Electronic Engineering

[2] University of Toronto,Photonics Group, Edward S. Rogers Sr. Department of Electrical and Computer Engineering

[3] Technical University of Berlin,Institute of Solid State Physics

来源：

Nanoscale Res Lett | / 6卷

关键词：

Molecular beam epitaxy; Temperature; Modulation; Quantum-dots; Semiconductor lasers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.

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