Problem of fabrication of diamond-based high-power microwave FETs

被引：0

作者：

G. Z. Garber

A. A. Dorofeev

A. M. Zubkov

Yu. V. Kolkovskii

Yu. A. Kontsevoi

K. N. Zyablyuk

A. Yu. Mityagin

N. Kh. Talipov

G. V. Chucheva

机构：

[1] Scientific Industrial Enterprise Pulsar,Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)

[2] Russian Academy of Sciences,undefined

来源：

Journal of Communications Technology and Electronics | 2014年 / 59卷

关键词：

Gate Length; Microstrip Line; Gate Width; Comb Structure; Elementary Gate;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Numerical experiments are used to plan the development of diamond-based microwave FETs with an output power of 2.5 W per 1 mm of the gate width at a frequency of 15 GHz. A family of the I–V characteristics of the Schottky-barrier FET with gate length LG = 50 nm and width W = 1 mm is calculated. Bases on analogy with a TGF2023-20 GaN HEMT, the topology of the high-power diamond transistor (parallel cells with gate widths W = 1.2 mm and 24 elementary gates per cell) is constructed.

引用

页码：379 / 383

页数：4

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