Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor

被引：0
|
作者：
Shuxiang Wu
Lizhu Ren
Fengmei Yu
Kungan Yang
Mei Yang
Yunjia Wang
Meng Meng
Wenqi Zhou
Shuwei Li
机构：
[1] Sun Yat-Sen University,State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering
来源：
Applied Physics A | 2014年 / 116卷
关键词：
Resistance Switching; High Resistance State; Trap Center; Reciprocal Space Mapping; Effective Barrier Height;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report reversible resistance switching behaviors in Pt/BiFeO3/Nb:SrTiO3 memristor. The resistance of the junctions can be tuned up to about five orders of magnitude by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The high performances are promising for employing ferroelectric junctions in nonvolatile memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the formation and annihilation of trap centers in the BFO films, resulting in Poole–Frenkel emission for low resistance state and the thermionic emission for high resistance state, respectively.
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页码：1741 / 1745
页数：4
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