Investigation of non-uniform magnetic field on the beam particle energy exchange

被引:0
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作者
Tusharika S Banerjee
Ayush Saxena
Arti Hadap
K T V Reddy
机构
[1] Department of Electronics and Telecommunication Engineering,Faculty at Pillai’s College of Engineering
[2] Sardar Patel Institute of Technology,Department of Electronics and Telecommunication Engineering
[3] Mukesh Patel School of Technology Management and Engineering,Department of Electronics and Telecommunications
[4] NMIMS,Faculty of Engineering and Technology
[5] Ramrao Adik Institute of Technology (RAIT),undefined
[6] Datta Meghe Institute of Medical Sciences (Deemed to be University),undefined
来源
Pramana | / 96卷
关键词
Electron emission; energy conversion; magnetic field confinement; magnetic after effect; microwave devices; microwave generation; particle beam transport; particle-in-cell methods; pulsed beam; sheet beam; vacuum tubes; wave power; 13.40.f; 87.50.Mn; 41.85.Ja; 46.70.De;
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摘要
This paper investigates the effect of a non-uniform magnetic field on beam particle energy exchange with three-dimensional particle-in-cell (3D-PIC) simulations. For this investigation, high current (kA range) planar sheet beam-driven rippled rectangular waveguide (RRWG) has been considered. For PIC simulations, beam current density was varied by changing the cathode cross-section (CS) in terms of thickness (beam thickness (BT)) with a common cathode width of 10 mm. There are four BTs (1 mm, 2 mm, 3 mm and 4 mm) and for each BT, seven types of magnetic field lines with the same magnitude of 0.6 T are used. These include one uniform magnetic field and six non-uniform magnetic field patterns. In this paper, the complete structural design of RRWG to generate output power up to around 45 Mega Watt (MW) with a particular type of non-uniform magnetic field pattern/periodicity to guide the sheet electron beam-driven RRWG is discussed. The application of a non-uniform magnetic field pattern to a 2D sheet electron beam with spatial distribution or periodicity at minimum gaps (typically   1 mm) leads to the enhancement in output power at voltages operational in the backward region of the device.
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