Doping Effects in Rare-Earth Borides

被引:0
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作者
T. Mori
T. Shishido
K. Nakajima
机构
[1] National Institute for Materials Science,Institute for Materials Research
[2] Tohoku University,undefined
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关键词
Thermoelectric; high temperature; boron; boron carbide; borides; variable-range hopping; disorder; -type; -type; Seebeck coefficient;
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摘要
Boron-rich cluster compounds are studied for their potential as high-temperature thermoelectric materials with low thermal conductivity. Two B12 icosahedra systems with attractive thermoelectric properties have recently been discovered: p-type REB44Si2 (where RE stands for rare earth) and the anomalous n-type series of RE-B-C(N) homologous compounds. Three different doping effects of these compounds were investigated in this work in an attempt to control the properties: doping disorder into REB44Si2, which is a variable-range hopping system, V-doping of YB44Si2, and C-doping (carbon composition control) of YB28.5C4. The attempt to enhance the Seebeck coefficient in TbB44Si2 through disorder was inconclusive, while V-doping of YB44Si2 had a negative effect on the thermoelectric properties. Controlling the carbon composition of YB28.5C4 appeared to be a promising route for increasing the absolute value of the Seebeck coefficient.
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页码:1098 / 1103
页数:5
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