Small-signal modulation characteristics for 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers

被引：0
|
作者：
Woon-Ho Seo
Canice O’brien
John F. Donegan
Yoonseok Lee
Gil-Ho Kim
机构：
[1] Sungkyunkwan University,Department of Electronic and Electrical Engineering
[2] Trinity College Dublin,Semiconductor Photonics Group, Department of Physics
来源：
Optical and Quantum Electronics | 2004年 / 36卷
关键词：
3 dB bandwidth; semiconductor quantum wells; small signal modulation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The small-signal modulation characteristics of 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers and their temperature dependence have been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain which results from the large electron effective mass in the dilute nitride system. The slope efficiency for the 3 dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.
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页码：1147 / 1153
页数：6
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