Polarization of luminescence in the nanostructure Si/CaF2 upon polarization of the nuclear spins of fluorine

The laws governing polarization of luminescence in the nanostructure Si/CaF2 upon polarization of the spins of the fluorine nuclei by means of optical excitation of charge carriers are considered theoretically. The possibility of studying experimentally the properties of nuclear spins in analyzing luminescence is shown. The polarization of luminescence is most informative in the range of excitation rates of charge carriers from 3·107 to 3·108 sec-1 with the CaF2 layer of thickness from 0.6 to 0.8 nm and optical excitation polarization degree of 0.1. © 2005 Springer Science+Business Media, Inc.