BiFeO3;
Schottky Barrier;
Nonlinear Coefficient;
Dielectric Loss Factor;
CCTO Ceramic;
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摘要:
(1 − x)CaCu3Ti4O12–xBiFeO3 (x = 0, 0.003, 0.006, 0.010 and 0.015) ceramics have been fabricated by the solid-state reaction method. The effects of BiFeO3 (BFO) doping on the microstructure, dielectric and electrical properties of CaCu3Ti4O12 (CCTO) ceramics were investigated. It is found that BFO doping can affect the microstructure of the CCTO ceramics, and some properties of CCTO ceramics can hence be improved by BFO doping. The XRD and Raman results show that no phase transition has occurred in the doping content range, but BFO doping induces the crystal structure distortion. Analysis of microstructure indicates that the grain morphology varies significantly with increasing BFO content, and an appropriate amount of BFO can promote the grain growth. Impedance spectroscopy results show that the dielectric constant and loss of the BFO-doped CCTO samples are stable with frequency. The dielectric constant and nonohmic properties can be enhanced markedly in an appropriate doping content. The dielectric loss of all BFO-doped samples was lower than that of undoped CCTO sample in low frequencies. The related mechanism is also discussed in the paper.
机构:
Indian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Indian Inst Technol Indore, Ctr Mat Sci & Engn, Khandwa Rd, Indore 452020, MP, India
Ahmednagar Coll, Dept Phys, Ahmednagar 414001, Maharashtra, IndiaIndian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Late, Ravikiran
Rai, Hari Mohan
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Indian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Indian Inst Technol Indore, Ctr Mat Sci & Engn, Khandwa Rd, Indore 452020, MP, IndiaIndian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Rai, Hari Mohan
Saxena, Shailendra K.
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Indian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Indian Inst Technol Indore, Ctr Mat Sci & Engn, Khandwa Rd, Indore 452020, MP, IndiaIndian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Saxena, Shailendra K.
Kumar, Rajesh
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Indian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Indian Inst Technol Indore, Ctr Mat Sci & Engn, Khandwa Rd, Indore 452020, MP, IndiaIndian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Kumar, Rajesh
Sagdeo, Archna
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Raja Ramanna Ctr Adv Technol, Ind Synchrotron Utilizat Div, Indore 452013, MP, IndiaIndian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Sagdeo, Archna
Sagdeo, Pankaj R.
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Indian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
Indian Inst Technol Indore, Ctr Mat Sci & Engn, Khandwa Rd, Indore 452020, MP, IndiaIndian Inst Technol Indore, Discipline Phys, Mat Res Lab, Khandwa Rd, Indore 452020, MP, India
机构:Seoul Natl Univ, Natl Core Res Ctr, Nano Syst Inst, Dept Mat Sci & Engn, Seoul 151742, South Korea
Choi, Sung-Woo
Hong, Seong-Hyeon
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Seoul Natl Univ, Natl Core Res Ctr, Nano Syst Inst, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Natl Core Res Ctr, Nano Syst Inst, Dept Mat Sci & Engn, Seoul 151742, South Korea
Hong, Seong-Hyeon
Kim, Young-Min
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机构:Seoul Natl Univ, Natl Core Res Ctr, Nano Syst Inst, Dept Mat Sci & Engn, Seoul 151742, South Korea