Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

被引：0
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作者：
R. A. Khabibullin
N. V. Shchavruk
A. Yu. Pavlov
D. S. Ponomarev
K. N. Tomosh
R. R. Galiev
P. P. Maltsev
A. E. Zhukov
G. E. Cirlin
F. I. Zubov
Zh. I. Alferov
机构：
[1] Russian Academy of Sciences,Institute of Ultrahigh Frequency Semiconductor Electronics
[2] Russian Academy of Sciences,Saint Petersburg Academic University—Nanotechnology Research and Education Center
[3] Russian Academy of Sciences,Saint Petersburg Science Center
来源：
Semiconductors | 2016年 / 50卷
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摘要：
The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n+-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl3/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.
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页码：1377 / 1382
页数：5
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