The effect of forming gas anneal on the oxygen content in bonded copper layer

被引：0

作者：

C. S. Tan

K. N. Chen

A. Fan

R. Reif

机构：

[1] Massachusetts Institute of Technology,Microsystems Technology Laboratories

[2] IBM T.J. Watson Research Center,undefined

来源：

Journal of Electronic Materials | 2005年 / 34卷

关键词：

Copper; thermocompression bonding; forming gas; three-dimensional integrated circuits (3-D ICs);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using secondary ion mass spectrometry (SIMS). Copper-covered wafers that are exposed to the air for 12 h and 12 days prior to bonding exhibit 0.08 at.% and 2.96 at.% of oxygen, respectively. However, prebonding forming gas anneal at 150°C for 15 min on 12-day-old Cu wafers successfully reduces the oxygen content in the bonded Cu layer to 0.52 at.%.

引用

页码：1598 / 1602

页数：4

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