Study and optimization of the photoluminescence of amorphous silicon carbide thin films

被引：0
|
作者：
Maricela Meneses
Mario Moreno
Alfredo Morales
Alfonso Torres
Pedro Rosales
Israel Vivaldo
机构：
[1] Instituto Nacional de Astrofísica,Óptica y Electrónica, INAOE
[2] Centro de Investigación en Materiales Avanzados,FCE, BUAP
[3] S.C.,undefined
[4] CIMAV-Unidad Monterrey,undefined
[5] Benemerita Universidad Autónoma de Puebla,undefined
[6] 72000,undefined
来源：
MRS Advances | 2018年 / 3卷 / 64期
关键词：
D O I：
10.1557/adv.2019.1
中图分类号：
学科分类号：
摘要：
In this work we report the study of the effect of the deposition parameters on the photoluminescence (PL) intensity of hydrogenated amorphous silicon-carbide (a-SiC:H) films deposited at very low temperature (150 °C) by Plasma Enhanced Chemical Vapor Deposition (PECVD). We have observed that the main deposition parameter that influences the wavelength emission peak is the methane/silane (CH4/SiH4) ratio used for the films deposition, due to a change on the film carbon content. On the other hand the deposition RF power affects the PL intensity, without a change in the PL emission peak. Also we have studied the effect of the film thickness on the PL intensity and we have observed an optimal film thickness.
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收藏
页码：3905 / 3916
页数：11
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