Enhanced Room Temperature Ferromagnetism by Fe Doping in Zn0.96Cu0.04O Diluted Magnetic Semiconductors

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作者
S. Muthukumaran
M. Ashokkumar
机构
[1] Government Arts College,PG and Research Department of Physics
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关键词
Fe; Cu doped ZnO; x-ray diffraction; photoluminescence; magnetic properties;
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摘要
Zn0.96−xCu0.04FexO (0 ≤ x ≤ 0.04) nanoparticles synthesized via the sol–gel technique had a hexagonal wurtzite ZnO structure without any Fe/Cu-related secondary phases. The crystallite size was reduced from Fe = 0% (23 nm) to Fe = 4% (16 nm) due to the suppression of grain surface growth by foreign impurities. Doping of higher Fe concentrations into Zn-Cu-O suppressed the ultra-violet (UV) emission band and balanced the defect-related visible emissions. The decrease of the UV and green emission intensity ratio (IUV/Igreen) and the UV and blue emission intensity ratio (IUV/Iblue) in photoluminescence spectra implied an increase of defect states with the increase of Fe concentrations. All the samples showed clear room temperature ferromagnetism. The saturation magnetization was increased by Fe co-doping which was attributed to the interaction between Fe-Fe ions. X-ray photoelectron spectra confirmed the absence of secondary phases like Fe3O4.
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页码:976 / 982
页数:6
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