High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots

被引：0
|
作者：
S. A. Mintairov
S. A. Blokhin
N. A. Kalyuzhnyy
M. V. Maximov
N. A. Maleev
A. M. Nadtochiy
R. A. Salii
N. V. Kryzhanovskaya
A. E. Zhukov
机构：
[1] St. Petersburg Academic University,
[2] Ioffe Physical Technical Institute,undefined
[3] Russian Academy of Sciences,undefined
[4] National Research University Higher School of Economics,undefined
来源：
Technical Physics Letters | 2022年 / 48卷
关键词：
photodetector; speed; frequency response; nanostructures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：161 / 164
页数：3
相关论文
共 50 条
  • [21] High-speed infrared detection by uncooled photovoltaic quantum well infrared photodetectors
    Schneider, H
    Schonbein, C
    Bihlmann, G
    vanSon, P
    Sigg, H
    APPLIED PHYSICS LETTERS, 1997, 70 (12) : 1602 - 1604
  • [22] Optoelectronic devices with active region based on InGaAs/GaAs quantum well-dots
    Maximov, M., V
    Gordeev, N. Yu
    Shernyakov, Yu M.
    Payusov, A. S.
    Mintairov, S. A.
    Kalyuzhnyy, N. A.
    Kornyshov, G. O.
    Serin, A. A.
    Usikova, A. A.
    Gadzhiev, I. M.
    Kulagina, M. M.
    Nadtochiy, A. M.
    Zhukov, A. E.
    SEMICONDUCTOR LASERS AND LASER DYNAMICS IX, 2020, 11356
  • [23] A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well
    Kong, MY
    Wang, XL
    Pan, D
    Zeng, YP
    Wang, J
    Ge, WK
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1456 - 1459
  • [24] Excitonic transfer in coupled InGaAs/GaAs quantum well to InAs quantum dots
    Mazur, Yu. I.
    Liang, B. L.
    Wang, Zh. M.
    Guzun, D.
    Salamo, G. J.
    Zhuchenko, Z. Ya.
    Tarasov, G. G.
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [25] GAAS/ALGAAS QUANTUM-WELL LASER FOR HIGH-SPEED APPLICATIONS
    LANG, H
    WOLF, HD
    KORTE, L
    HEDRICH, H
    HOYLER, C
    THANNER, C
    IEE PROCEEDINGS-J OPTOELECTRONICS, 1991, 138 (02): : 117 - 121
  • [26] Optical properties of delta doped InGaAs/GaAs quantum well MSM photodetectors
    Florovic, M
    Kovác, J
    Chovan, J
    Sciana, B
    Radziewicz, D
    Zborovska-Lindert, I
    Tlaczala, M
    ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2004, : 235 - 238
  • [27] InSb high-speed photodetectors grown on GaAs substrate
    Kimukin, I
    Biyikli, N
    Ozbay, E
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 5414 - 5416
  • [28] INVESTIGATION OF HIGH-QUANTUM EFFICIENCY INGAAS/INP AND INGAAS/GAAS QUANTUM DOTS
    SCHMIDT, A
    FORCHEL, A
    STRAKA, J
    GYURO, I
    SPEIER, P
    ZIELINSKI, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2896 - 2899
  • [29] MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors
    Yang, Heming
    Zheng, Yuanliao
    Tang, Zhou
    Li, Ning
    Zhou, Xiaohao
    Chen, Pingping
    Wang, Jiqing
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (13)
  • [30] Electronic states in GaAs photoconverters with InGaAs quantum well-dots
    Mintairov, Sergey A.
    Evstropov, Valery V.
    Kalyuzhnyy, Nikolay A.
    Maximov, Mikhail V.
    Mintairov, Mikhail A.
    Nadtochiy, Alexey M.
    Pavlov, Nikolay V.
    Shvarts, Maxim Z.
    Zhukov, Alexey E.
    APPLIED PHYSICS EXPRESS, 2020, 13 (01)
12345