An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

被引：0
|
作者：
V. Ya. Aleshkin
N. V. Dikareva
A. A. Dubinov
B. N. Zvonkov
K. E. Kudryavtsev
S. M. Nekorkin
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Lobachevsky State University of Nizhny Novgorod,Physical Technical Research Institute
[3] Lobachevsky State University of Nizhny Novgorod,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
GaAs; Pump Current; Diode Structure; Constituent Layer; Direct Optical Transition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.
引用
收藏
页码：170 / 173
页数：3
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