Effects of Heat-Treatment Duration and Dislocation Density on the Transport Properties of Semi-insulating Gallium Arsenide Crystals

被引：0
|
作者：
M. B. Litvinova
S. V. Shutov
I. V. Boriskin
机构：
[1] National Academy of Sciences of Ukraine,Institute of Semiconductor Physics (Kherson Branch)
来源：
Inorganic Materials | 2001年 / 37卷
关键词：
Inorganic Chemistry; Gallium; Dislocation Density; Transport Property; Carrier Mobility;
D O I：
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中图分类号：
学科分类号：
摘要：
Data are presented on carrier mobility and strain in semi-insulating undoped gallium arsenide crystals containing different dislocation densities and annealed at 900°C for various lengths of time. The effect of the dislocations is found to depend on heat-treatment time, which is attributed to changes in the composition of defect clouds, in particular, owing to As diffusion.
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页码：102 / 104
页数：2
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