Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

被引:2
|
作者
Liuxian Pan
Shushen Li
Jinlong Liu
Zhichuan Niu
Songlin Feng
Houzhi Zheng
机构
[1] Yiyang Teacher’s College,Department of Physics
[2] Institute of Semiconductors,National Laboratoly for Superlattlces and Microstructures
[3] Chinese Academy of Sciences,undefined
来源
关键词
quantum dot; quantum computing; decoherence;
D O I
10.1360/02ys9073
中图分类号
学科分类号
摘要
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.
引用
收藏
页码:666 / 670
页数:4
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