Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures

The results of simultaneous measurements of dynamic current-voltage and capacitance-voltage characteristics are presented for metal-oxide-semiconductor structures in the temperature range T = 420–470 K and voltage-sweep rates βv = 0.5–1000 mV/s. The convective currents Icon (V) in oxide are extracted from usual ion currents in the I-V characteristics. In Icon (V) curves, the Na+-ion peaks are split. In addition, an envelope curve is seen in initial portions of “fast” Icon(V) curves with βV ≳ 10 mV/s that indicates to the presence of a certain quasi-steady ion-transport mode. A more equilibrium mode at slow rates βV < 1 mV/s manifests itself in the form of stabilization of convective-current peak shapes. The nature of efficient neutralization of the second peaks in the Icon(V) dependences is discussed.