Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices

被引：0
|
作者：
M. I. Vexler
Yu. Yu. Illarionov
S. E. Tyaginov
T. Grasser
机构：
[1] Russian Academy of Sciences,Ioffe Physical
[2] Institute for Microelectronics,Technical Institute
来源：
Semiconductors | 2015年 / 49卷
关键词：
Field Effect Transistor; Tunneling Current; Effective Thickness; Calcium Fluoride; Local Current Density;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An approach toward simplification of the model of the tunneling transport of electrons through a thin layer of crystalline calcium fluoride into a silicon (111) substrate with subsequent implementation in simulators of semiconductor devices is suggested. The validity of the approach is proven by comparing the results of modeling using simplified formulas with the results of precise calculations and experimental data. The approach can be applied to calculations of tunneling currents in structures with any crystalline insulators on Si (111).
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页码：259 / 263
页数：4
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