Effects of electrically active point defects on the structure and electrical properties of Bi-Te-Se and Sb-Bi-Te solid solutions

被引：0
|
作者：
P. P. Shvangiradze
E. P. Sabo
机构：
[1] Sukhumi Physicotechnical Institute,Academy of Sciences of Abkhazia
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Thermoelectric Power; Bismuth Telluride; Antisite Defect; Intrinsic Point Defect; Intrinsic Donor;
D O I：
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中图分类号：
学科分类号：
摘要：
The effects of intrinsic point defects on the electrical properties and structure ofp-type Sb-Bi-Te and n-type Bi-Te-Se alloys were studied. The concentrations of intrinsic donors and acceptors were shown to depend not only on the alloy composition but also on the self-compensation conditions in the materials doped with Group IV (Si, Ge, Sn, Pb) and VII (CI, I) elements. The Te-rich alloys doped with Cl or Pb to optimal carrier concentration show the best thermoelectric performance.
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页码：1104 / 1107
页数：3
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