Effects of electrically active point defects on the structure and electrical properties of Bi-Te-Se and Sb-Bi-Te solid solutions

The effects of intrinsic point defects on the electrical properties and structure ofp-type Sb-Bi-Te and n-type Bi-Te-Se alloys were studied. The concentrations of intrinsic donors and acceptors were shown to depend not only on the alloy composition but also on the self-compensation conditions in the materials doped with Group IV (Si, Ge, Sn, Pb) and VII (CI, I) elements. The Te-rich alloys doped with Cl or Pb to optimal carrier concentration show the best thermoelectric performance.