Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor

被引：0
|
作者：
B. Kotur
V. Babizhetskyy
E. Bauer
F. Kneidinger
A. Danner
L. Leber
H. Michor
机构：
[1] Ivan Franko Lviv National University,Institute of Solid State Physics
[2] Vienna University of Technology,undefined
来源：
Materials Science | 2013年 / 49卷
关键词：
intermetallic compounds; homogeneity range; electron/hole doping;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effects and feasibility of metal site doping of the tetragonal diamagnetic insulator FeGa3 by Fe/Co, Fe/Mn, and Co/Ni substitutions were investigated by the X-ray electron-probe microanalysis, electrical resistivity, specific heat, and magnetic susceptibility measurements. The substitution of Co for Fe in FeGa3 does not change its structural type and preserves the structure of the binary parent compound ( FeGa3), whereas the solubility of Mn in the FeGa3 -type structure is limited to 3 at.% and a finite solubility of Ni in CoGa3 is not detected.
引用
收藏
页码：211 / 219
页数：8
相关论文
共 50 条
  • [31] INFLUENCE OF DOPING ON THE DIELECTRIC FUNCTION IN NARROW-GAP SEMICONDUCTORS
    QIAN, DR
    LIU, L
    SZUSZKIEWICZ, W
    BARDYSZEWSKI, W
    PHYSICAL REVIEW B, 1991, 44 (11): : 5540 - 5549
  • [32] Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers
    K. L. Litvinenko
    L. Nikzad
    J. Allam
    B. N. Murdin
    C. R. Pidgeon
    J. J. Harris
    L. F. Cohen
    Journal of Superconductivity and Novel Magnetism, 2007, 20 : 461 - 465
  • [33] LASER EPITAXY AND PROPERTIES OF NARROW-GAP SEMICONDUCTOR LAYERS
    PLYATSKO, SV
    GROMOVOJ, YS
    SIZOV, FF
    INFRARED PHYSICS, 1991, 31 (02): : 173 - 178
  • [34] MERCURY ZINC TELLURIDE, A NEW NARROW-GAP SEMICONDUCTOR
    SHER, A
    EGER, D
    ZEMEL, A
    APPLIED PHYSICS LETTERS, 1985, 46 (01) : 59 - 61
  • [35] In1-xMnxSb -: a narrow-gap ferromagnetic semiconductor
    Wojtowicz, T
    Cywinski, G
    Lim, WL
    Liu, X
    Dobrowolska, M
    Furdyna, JK
    Yu, KM
    Walukiewicz, W
    Kim, GB
    Cheon, M
    Chen, X
    Wang, SM
    Luo, H
    APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4310 - 4312
  • [36] Spin dynamics in narrow-gap semiconductor epitaxial layers
    Litvinenko, K. L.
    Nikzad, L.
    Allam, J.
    Murdin, B. N.
    Pidgeon, C. R.
    Harris, J. J.
    Cohen, L. F.
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2007, 20 (06) : 461 - 465
  • [37] THEORY OF ENRICHED LAYER AT THE SURFACE OF A NARROW-GAP SEMICONDUCTOR
    KUCHMA, AE
    SVERDLOV, VA
    JETP LETTERS, 1988, 47 (05) : 321 - 322
  • [38] ELECTRICAL CHARACTERISTICS OF NARROW-GAP MULTILAYER SEMICONDUCTOR STRUCTURES
    SIZOV, FF
    DARCHUK, SD
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (01): : 107 - 112
  • [39] Anomalous Lande factor in narrow-gap semiconductor heterostructures
    López-Richard, V
    Marques, GE
    Trallero-Giner, C
    SOLID STATE COMMUNICATIONS, 2000, 114 (12) : 649 - 654
  • [40] Electronic correlations in FeGa3 and the effect of hole doping on its magnetic properties
    Gamza, M. B.
    Tomczak, J. M.
    Brown, C.
    Puri, A.
    Kotliar, G.
    Aronson, M. C.
    PHYSICAL REVIEW B, 2014, 89 (19)
12345