Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano- and Hetero-Structures

被引:0
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作者
Taiichi Otsuji
Takayuki Watanabe
Amine El Moutaouakil
Hiromi Karasawa
Tsuneyoshi Komori
Akira Satou
Tetsuya Suemitsu
Maki Suemitsu
Eiichi Sano
Wojciech Knap
Victor Ryzhii
机构
[1] Tohoku University,Research Inst. of Electrical Communication
[2] Hokkaido University,Research Center for Integrated Quantum Electronics
[3] University of Montpellier & Centre National de la Recherche Scientifique,Computational Nano
[4] University of Aizu,Electronics Laboratory
关键词
Terahertz emission; Two-dimensional electrons; Plasmons; Graphene; Heterostructures;
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摘要
This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author’s original interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.
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页码:629 / 645
页数:16
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