New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials

被引：0

作者：

Kuznetsov F.A. ^{[1
]}

Smirnova T.P. ^{[1
]}

Fainer N.I. ^{[1
]}

Morozova N.B. ^{[1
]}

Igumenov I.K. ^{[1
]}

机构：

[1] Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 3

来源：

Russian Microelectronics | 2013年 / 42卷 / 08期

关键词：

dielectric films; metal films; MOCVD technique; phase composition; properties; X-ray diffraction;

D O I：

10.1134/S106373971308009X

中图分类号：

学科分类号：

摘要：

Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO 2)1 - x (Me 2O3) x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that the resulting materials enjoy a number of unique functional properties, which makes them promising for application in micro-, nano-, and optoelectronic devices. © 2013 Pleiades Publishing, Ltd.

引用

页码：439 / 447

页数：8

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