New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials

被引：0
|
作者：
Kuznetsov F.A. [1 ]
Smirnova T.P. [1 ]
Fainer N.I. [1 ]
Morozova N.B. [1 ]
Igumenov I.K. [1 ]
机构：
[1] Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 3
来源：
Russian Microelectronics | 2013年 / 42卷 / 08期
关键词：
dielectric films; metal films; MOCVD technique; phase composition; properties; X-ray diffraction;
D O I：
10.1134/S106373971308009X
中图分类号：
学科分类号：
摘要：
Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO 2)1 - x (Me 2O3) x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that the resulting materials enjoy a number of unique functional properties, which makes them promising for application in micro-, nano-, and optoelectronic devices. © 2013 Pleiades Publishing, Ltd.
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页码：439 / 447
页数：8
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