Growth and Properties of V-Doped HgSe Crystals

被引：0
|
作者：
S. Yu. Paranchich
Yu. S. Paranchich
V. N. Makogonenko
O. S. Romanyuk
M. D. Andriichuk
机构：
[1] Fed'kovich State University,
来源：
Inorganic Materials | 2001年 / 37卷
关键词：
Magnetic Field; Inorganic Chemistry; Vanadium; Conduction Band; Transport Property;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
HgSe〈V〉 crystals with a vanadium concentration ranging from 1024to 1026m–3were grown, and their transport properties were investigated between 77 and 400 K in magnetic fields of up to 12.73 kA/m. The effect of long-term annealing in Se vapor on the electron concentration and mobility in the crystals was studied. The n(NV), μ(T), and RH(T) data obtained before and after annealing suggest that the V dopant produces a resonance donor level in the conduction band of HgSe at EV≃ 0.250–0.260 eV.
引用
收藏
页码：556 / 559
页数：3
相关论文
共 50 条
  • [1] Growth and properties of V-doped HgSe crystals
    Paranchich, SY
    Paranchich, YS
    Makogonenko, VN
    Romanyuk, OS
    Andriichuk, MD
    INORGANIC MATERIALS, 2001, 37 (06) : 556 - 559
  • [2] Growth and properties of V-doped CdxHg1-xTe crystals
    Paranchich, SY
    Paranchich, YS
    Andriichuk, MD
    Makogonenko, VN
    Romanyuk, OS
    INORGANIC MATERIALS, 2001, 37 (06) : 564 - 566
  • [3] Growth and Properties of V-Doped CdxHg1 – xTe Crystals
    S. Yu. Paranchich
    Yu. S. Paranchich
    M. D. Andriichuk
    V. N. Makogonenko
    O. S. Romanyuk
    Inorganic Materials, 2001, 37 : 564 - 566
  • [4] OPTICAL-PROPERTIES OF UNDOPED AND V-DOPED V(A)-VI(A)-VII(A) SINGLE-CRYSTALS
    PARK, SA
    KIM, MY
    LIM, JY
    PARK, BS
    KOH, JD
    KIM, WT
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 187 (01): : 253 - 260
  • [5] Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals
    Jung, Eunjin
    Kim, Younghee
    Kwon, Yong-Jin
    Lee, Chae-Young
    Lee, Myung-Hyun
    Lee, Won-Jae
    Choi, Doo-Jin
    Jeong, Seong-Min
    CERAMICS INTERNATIONAL, 2018, 44 (18) : 22632 - 22637
  • [6] Spectroscopic properties of the V-doped borate glasses
    Padlyak, B. V.
    Padlyak, T. B.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2020, 528
  • [7] Electrical properties of Cr-doped HgSe single crystals
    Rarenko, IM
    Paranchich, YS
    INORGANIC MATERIALS, 1997, 33 (03) : 239 - 242
  • [8] THE IDENTIFICATION OF PRECIPITATES IN V-DOPED INP SINGLE-CRYSTALS
    COCKAYNE, B
    MACEWAN, WR
    COURTNEY, SJ
    HARRIS, IR
    SMITH, NA
    JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 610 - 612
  • [9] GROWTH OF HGSE CRYSTALS FROM SOLUTIONS AND SOME OF THEIR PROPERTIES
    CRUCEANU, E
    NISTOR, N
    NICULESC.D
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1966, 11 (02): : 276 - &
  • [10] Grain growth kinetics and magnetic properties of a V-doped ZnO dilute magnetic oxide
    Olive-Mendez, Sion F.
    Lopez Anton, Ricardo
    Holguin-Momaca, Jose T.
    CERAMICS INTERNATIONAL, 2020, 46 (02) : 2116 - 2121
12345