Electroluminescence of ion-implanted Si-SiO2 structures

被引：0
|
作者：
A. P. Baraban
P. P. Konorov
L. V. Malyavka
A. G. Troshikhin
机构：
[1] St. Petersburg State University,Institute of Physics
来源：
Technical Physics | 2000年 / 45卷
关键词：
Oxide; Oxide Layer; Luminescent Center; SIMOX; Layer Bulk;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250–800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed.
引用
收藏
页码：1042 / 1044
页数：2
相关论文
共 50 条
  • [41] High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+
    Kaschieva, S.
    Angelov, Ch
    Dmitriev, S. N.
    20TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES, 2017, 2018, 992
  • [42] ELECTROLUMINESCENCE OF EUROPIUM ION-IMPLANTED ALUMINUM DURING ANODIZATION
    KATSUNO, M
    MORISAKI, S
    BABA, N
    IWAKI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (08): : 1262 - 1263
  • [43] Electroluminescence in Si/SiO2 layer structures
    Heikkilä, L
    Kuusela, T
    Hedman, HP
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) : 2179 - 2184
  • [44] Nanomechanical properties of ion-implanted Si
    Nagy, P. M.
    Aranyi, D.
    Horvath, P.
    Peto, G.
    Kalman, E.
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (3-4) : 875 - 880
  • [45] CHARGE CHARACTERISTICS OF ION-IMPLANTED AND ANNEALED NITRIDE OXIDE SI STRUCTURES
    STEIN, HJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C79 - C79
  • [46] Luminescence of isoelectronically ion-implanted SiO2 layers
    Salh, Roushdey
    Kourkoutis, L. Fitting
    Schmidt, B.
    Fitting, H.-J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (09): : 3132 - 3144
  • [47] Interstitial defects in ion-implanted Si
    Kovacevic, I
    Borjanovic, V
    Pivac, B
    VACUUM, 2003, 71 (1-2) : 129 - 133
  • [48] EPR OF ION-IMPLANTED DONORS IN SI
    BROWER, KL
    BORDERS, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 267 - &
  • [49] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI
    GRUSKA, B
    GOTZ, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 59 (3-4): : 157 - 167
  • [50] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2
    DEVINE, RAB
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 563 - 565
12345