Band effects on the conductivity for a two-band Hubbard model

被引:0
|
作者
S.-J. Gu
J. Cao
S. Chen
Y. Liu
H.-Q. Lin
机构
[1] Department of Physics and Institute of Theoretical Physics,
[2] The Chinese University of Hong Kong,undefined
[3] Beijing National Laboratory for Condensed Matter Physics,undefined
[4] Institute of Physics,undefined
[5] Chinese Academy of Sciences,undefined
来源
关键词
71.30.+h Metal-insulator transitions and other electronic transitions; 71.10.Fd Lattice fermion models (Hubbard model, etc.); 74.70.-b Superconducting materials;
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摘要
The band effects on the conductivity of a one-dimensional two-band Hubbard model is studied based on the ground state energy analysis. It is found that the system with filling factor one is a metal at zero temperature if the on-site interaction U is smaller than a critical value Uc, and is an insulator if U is larger than Uc. The value of metal-insulator transition point Uc is obtained. This result is different from that of 1D single-band Hubbard model where the quantum phase transition point Uc=0. Therefore, the orbital degree of freedom plays an essential role in the states of matter.
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页码:477 / 481
页数:4
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