Controlled placement of nanoscale building blocks: Toward large-scale fabrication of nanoscale devices

被引：0

作者：

Seong Jin Koh

机构：

[1] The University of Texas at Arlington,Department of Materials Science and Engineering

来源：

JOM | 2007年 / 59卷

关键词：

Complementary Metal Oxide Semiconductor; Indium Phosphide; Control Placement; Nanoscale Object; Nanoscale Building Block;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Much effort has been made recently to develop future devices or sensors comprising nanoscale building blocks such as nanowires, carbon nanotubes, DNA, proteins, and nanoparticles. One of the key requirements to realize these devices/sensors is the capability to place individual nanoscale building blocks onto exact substrate locations. This article will review recent progress in various approaches exploited to place or assemble nanoscale building blocks in a controlled way.

引用

页码：22 / 28

页数：6

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