Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

被引：0
|
作者：
Mingqing Qian
Dan Shan
Yang Ji
Dongke Li
Jun Xu
Wei Li
Kunji Chen
机构：
[1] Nanjing University,National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures
来源：
Nanoscale Research Letters | 2016年 / 11卷
关键词：
Phosphorus-doped; Si nanocrystals/SiO; multilayers; Carrier transport;
D O I：
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学科分类号：
摘要：
High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.
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